Photomicrosensor (Reflective)
EE-SY113
Be sure to read Precautions on page 25.
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Four, 0.5
■ Features
? Compact reflective Photomicrosensor (EE-SY110) with a molded
housing and a dust-tight cover.
■ Absolute Maximum Ratings (Ta = 25 ° C)
Item
Symbol
Rated value
Notch for directional discrimination
Emitter
Forward current
Pulse forward cur-
rent
Reverse voltage
I F
I FP
V R
50 mA
(see note 1)
1A
(see note 2)
4V
2.5
Detector
Collector–Emitter
V CEO
30 V
voltage
Four, 0.25
Emitter–Collector
voltage
Collector current
V ECO
I C
---
20 mA
15 to 1 8
Ambient tem-
Collector dissipa-
tion
Operating
P C
Topr
100 mW
(see note 1)
–40 ° C to 80 ° C
Internal Circuit
perature
Storage
Tstg
–40 ° C to 85 ° C
A
C
Unless otherwise specified, the
tolerances are as shown below.
Soldering temperature
Tsol
260 ° C
(see note 3)
K
Terminal No.
A
K
C
E
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Tolerance
± 0.3
± 0.375
± 0.45
± 0.55
± 0.65
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. The pulse width is 10 μ s maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
V F
I R
λ P
I L
I D
I LEAK
1.2 V typ., 1.5 V max.
0.01 μ A typ., 10 μ A max.
940 nm typ.
160 μ A min., 1,600 μ A max.
2 nA typ., 200 nA max.
2 μ A max.
I F = 30 mA
V R = 4 V
I F = 20 mA
I F = 20 mA, V CE = 10 V
White paper with a reflection ratio of
90%, d = 4.4 mm (see note)
V CE = 10 V, 0 l x
I F = 20 mA, V CE = 10 V with no reflec-
tion
Collector–Emitter saturated volt- V CE (sat)
age
---
---
Peak spectral sensitivity wave-
λ P
850 nm typ.
V CE = 10 V
length
Rising time
Falling time
tr
tf
30 μ s typ.
30 μ s typ.
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
152
EE-SY113 Photomicrosensor (Reflective)
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相关代理商/技术参数
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EE-SY124 功能描述:光学开关(反射型,光电晶体管输出) REFL PHOTOTRANSISTOR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
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